[TechWeb] On October 21st, SK hynix announced today that it will develop a third-generation 1Z nano DDR4 DRAM, which is said to achieve the industry's largest 16Gb in a single chip standard. The amount of storage produced is also the largest in existing DRAMs.
Image from SK Hynix official website
This product has a productivity increase of approximately 27% compared to the previous generation of 1Y products, and it is competitive in cost because it can be produced without the use of ultra-high-priced EUV (Extreme UV Lithography) exposure processes. Advantage.
The new 1Z nano DRAM supports data transfer rates of up to 3,200 Mbps and is said to be the highest speed in the DDR4 specification. In terms of power consumption, power consumption is reduced by approximately 40% compared to the same capacity module based on the second generation 8Gb product.
The third generation products are suitable for new materials that have never been used in the previous generation of production processes, maximizing the electrostatic capacity (Capacitance) of the key elements of DRAM operation. In addition, new design techniques have been introduced to improve the stability of the movement.
Next, SK hynix plans to extend the third-generation 10nm micro-engineering technology to a variety of applications, including the next-generation mobile DRAM LPDDR5 and the highest-end DRAM HBM3.
The DRAM 1Z development business TF chief Li Ting-soo said that the chip plans to complete mass production within the year and will be officially supplied from next year.